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SUM110N05-06L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.5
2.0
V GS = 10 V
I D = 30 A
100
1.5
10
T J = 150 °C
T J = 25 °C
1.0
0.5
0.0
1
- 50
- 25
0
25
50
75
100
125
150
175
0.2
0.4
0.6
0.8
1.0
1.2
1000
100
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
70
65
V SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
I D = 10 mA
10
1
0.1
I AV (A) at T J = 150 °C
I AV (A) at T J = 25 °C
60
55
50
0.00001
0.0001
0.001
0.01
0.1
1
- 50
- 25
0
25
50
75
100
125
150
175
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4
t in (s)
Avalanche Current vs. Time
T J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72005
S-80108-Rev. C, 21-Jan-08
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